何南，男，江苏连云港人，中共党员，预聘副教授。作为类脑计算系统团队的核心成员，长期致力于存算一体器件及神经形态计算应用等领域的研究。以第一作者身份在相关领域国内外高水平期刊和会议上发表论文15篇，如《Applied Physics Letters》、《IEEE Transactions on Electron Devices》、《IEEE Electron Device Letters》等，申请发明专利7项，其中4项已获得授权。

[1]多功能异质结忆阻器设计与制备

[2]相变/阻变存储器物理机制与性能优化

[3]神经形态计算应用研究

近期代表性论文：

[1]     Nan He, Jie Yan, Zhining Zhang, Fan Ye, Haiming Qin, Ertao Hu, Xinpeng Wang, Pu Chen, Yang Sheng, Yi Tong, Lei Zhang, and Feng Xu, “Realization of dual-functional resistive switching characteristics in Ag−In−Zn−S/sericin peptide-based memristive device”, Applied Physics Letters, vol. 123, no. 21, p. 212101, 2023.

[2]     Nan He, Jun Liu, Jianguang Xu, Xiaojuan Lian, Xiang Wan, Ertao Hu, Xiaoyan Liu, Jie Ji, Hao Zhang, Lei Wang, Feng Xu, and Yi Tong, “Inserted effects of MXene on switching mechanisms and characteristics of SiO₂-based memristor: experimental and first-principles investigations”, IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3688-3693, 2022.

[3]    Nan He, Qiangqiang Zhang, Langyi Tao, Xintong Chen, Qi Qin, Xiaoyan Liu, Xiaojuan Lian, Xiang Wan, Ertao Hu, Jianguang Xu, Feng Xu, and Yi Tong, “V₂C-based memristor for applications of low power electronic synapses”, IEEE Electron Device Letters, vol. 42, no. 3, pp. 319-322, 2021.

[4]     Nan He, Fan Ye, Jun Liu, Tianlong Sun, Xinpeng Wang, Wenjie Hou, Weijing Shao, Xiang Wan, Yi Tong, Feng Xu, and Yang Sheng, “Multifunctional Ag−In−Zn−S/Cs₃Cu₂Cl₅-based memristors with coexistence of non-volatile memory and volatile threshold switching behaviors for neuroinspired computing”, Advanced Electronic Materials, vol. 9, no. 73, p. 2201038, 2022.

[5]     Nan He, Langyi Tao, Qiangqiang Zhang, Xiaoyan Liu, Xiaojuan Lian, Xiang Wan, Er-Tao Hu, Lin He, Yang Sheng, Feng Xu, and Yi Tong, “Reversible transition of volatile and non-volatile switching in Ag−In−Zn−S quantum dot-based memristors with low power consumption for synaptic applications”, ACS Applied Nano Materials, vol. 4, no. 3, pp. 2365-2374, 2021.